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| Transistors 2SC5848 Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2079 Features High forward current transfer ratio hFE Suitable for high-density mounting and douwsizing of the equipment for ultraminiature leadless package Package: 0.6 mm x 1.0 mm (hight 0.39 mm) 3 2 Unit: mm 1 1.000.05 0.600.05 0.39+0.01 -0.03 0.150.05 0.050.03 0.350.01 0.250.05 0.500.05 0.250.05 1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 7 100 200 100 125 -55 to +125 Unit V V V mA mA mW C C 1: Base 2: Emitter 3: Collector 3 0.650.01 2 0.050.03 ML3-N2 Package Marking Symbol : 3E Electrical Characteristics Ta = 25C3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cut-off current (Base open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 10 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCB = 10 V, IE = -2 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 180 0.1 100 2.2 Min 60 50 7 0.1 100 390 0.3 Typ Max Unit V V V A A V MHz pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date : December 2004 SJC00327AED 1 2SC5848 2SC5848_ PC-Ta PC Ta 2SC5848_IC-VCE IC VCE 2SC5848_IC-IB IC IB 120 50 Ta = 25C IB = 160 A 140 A 120 A 140 120 Collector power dissipation PC (mW) 100 VCE = 10 V Ta = 25C Collector current IC (mA) Collector current IC (mA) 40 80 60 40 20 0 100 80 60 40 20 0 30 100 A 80 A 60 A 20 10 40 A 20 A 0 20 40 60 80 100 120 140 0 0 2 4 6 8 10 12 0 0.2 0.4 0.6 0.8 1.0 Ambient temperature Ta (C) 2SC5848_IB-VBE Collector-emitter voltage VCE (V) 2SC5848_IC-VBE Base current IB (mA) 2SC5848_VCE(sat)-IC IB VBE IC VBE VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 3.5 3.0 VCE = 10 V Ta = 25C 120 VCE = 10V 100 1 IC / IB = 10 Base current IB (mA) 2.5 2.0 1.5 1.0 0.5 0 Collector current IC (mA) 80 60 40 20 0 Ta = 75C 25C -25C 0.1 Ta = 75C -25C 25C 0 0.2 0.4 0.6 0.8 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 1 10 100 Base-emitter voltage VBE (V) 2SC5848_hFE-IC Base-emitter voltage VBE (V) 2SC5848_Cob-VCB Collector current IC (mA) hFE IC Cob VCB Ta = 75C VCE = 10 V Collector output capacitance C (pF) (Common base, input open circuited) ob 350 300 250 -25C 200 150 100 50 0 10 Forward current transfer ratio hFE f = 1 MHz Ta = 25C 25C 1 10 100 1 000 1 0 8 16 24 32 40 Collector current IC (mA) Collector-base voltage VCB (V) 2 SJC00327AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP |
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